FC150

FC150 PNP+NPN复合三极管 -30V/60V -150mA/100mA 800/1500 SOT-163/CPH6 标记150 用于开关/数字电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -30V/60V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -25V/50V 集电极连续输出电流IC Collector CurrentIC| -150mA/100mA 截止频率fT Transtion FrequencyfT| 210MHz/200MHz 直流电流增益hFE DC Current GainhFE| 800/1500 管压降VCE（sat） Collector-Emitter Saturation Voltage| -150mV/100mV 耗散功率Pc Power Dissipation| 300mW Description & Applications| Features • PNP/NPN Epitaxial Planar Silicon Composite Transistor • Low-Frequency General-Purpose Amp, Driver Applications • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. • Adoption of FBET process. • High DC current gain. • Hgih VEBO. 描述与应用| 特点 •PNP/ NPN平面外延硅复合晶体管 •低频通用放大器，驱动器应用 •复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 •FC150两个芯片组成，相当于2SA1813/2SC4413，放置在一个包装。 •通过过程FBET。 •高直流电流增益。 •Hgih VEBO。