BQ4015

512Kx8 非易失性 SRAM，5% 电压容限

The CMOS bq4015/Y/LY is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.

The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.

At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.

The bq4015/Y/LY uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

The bq4015/Y/LY requires no external circuitry and is compatible with the industry-standard 4-Mb SRAM pinout.

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Data Retention for at least 10 Years Without Power

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Automatic Write-Protection During Power-up/Power-Down Cycles

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Conventional SRAM Operation, Including Unlimited Write Cycles

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Internal Isolation of Battery before Power Application

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5-V or 3.3-V Operation

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Industry Standard 32-Pin DIP Package