IRFR9024NTRPBF
数据手册.pdfINTERNATIONAL RECTIFIER IRFR9024NTRPBF 场效应管, MOSFET, P沟道
最大源漏极电压VdsDrain-Source Voltage| \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -1.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.175Ω @-1.6A,-10V 开启电压Vgs(th)Gate-Source Threshold Voltage| -2.0--4.0V 耗散功率PdPower Dissipation| 3.8W Description & Applications| Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead IRFU9024N Advanced Process Technology Fast Switching Fully Avalanche Rated 描述与应用| 超低导通电阻 P沟道 表面贴装(IRFR9024N) 直铅(IRFU9024N) 先进的工艺技术 快速切换
e络盟:
场效应管, MOSFET, P沟道
艾睿:
Trans MOSFET P-CH 55V 11A 3-Pin2+Tab DPAK T/R
Allied Electronics:
MOSFET, Power; P-Ch; VDSS -55V; RDSON 0.175Ohm; ID -11A; D-Pak TO-252AA; PD 38W
Verical:
Trans MOSFET P-CH 55V 11A 3-Pin2+Tab DPAK T/R
力源芯城:
-55V,-11A,P沟道功率MOSFET
DeviceMart:
MOSFET P-CH 55V 11A DPAK