NTE2348

NTE ELECTRONICS  NTE2348  双极性晶体管, TO-3P

Description:

The NTE2349 NPN and NTE2350 PNP are silicon complementary Darlington transistors in a TO3

type package designed for use as output devices in general purpose amplifier applications.

Features:

High DC Current Gain: hFE= 1000 Min @ IC= 25A

                               hFE= 400 Min @ IC= 50A

Diode Protection to Rated IC

Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

Junction Temperature to +200°C

e络盟:
双极性晶体管, TO-3P

艾睿:
Trans GP BJT NPN 800V 12A 3-Pin3+Tab TO-3P

Verical:
Trans GP BJT NPN 800V 12A 3-Pin3+Tab TO-3P

Newark:
# NTE ELECTRONICS  NTE2348  Bipolar BJT Single Transistor, NPN, 800 V, 15 MHz, 150 W, 12 A, 10 hFE

MASTER:
Trans GP BJT NPN 800V 12A 3-Pin3+Tab TO-3P

Electro Sonic:
Trans GP BJT NPN 800V 12A 3-Pin3+Tab TO-3P