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D55342K07B2E00RBSV

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Vishay Semiconductor 威世 被动器件

RES THNFLM D55342 1206 2KΩ 1% 100PPM 0.01%

* Established reliability, “S” and “V” failure rate level 10 ppm, C = 2 * High purity alumina substrate * Wraparound termination featuring a tenacious adhesion layer covered with an electroplated nickel barrier layer for +150 °C operating conditions * Very low noise and voltage coefficient * Non-inductive * Laser-trimmed tolerances ± 0.1 % * Wraparound resistance less than 0.010 Ω typical * In-lot tracking less than 5 ppm/°C * Complete MIL-testing available in-house * Antistatic waffle pack or tape and reel packaging available * Military / aerospace / QPL

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