NSS40200LT1G
数据手册.pdf
ON Semiconductor
安森美
分立器件
ON SEMICONDUCTOR NSS40200LT1G 单晶体管 双极, PNP, -40 V, 100 MHz, 710 mW, -2 A, 150 hFE
The is a PNP Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCEsat and high current gain capability.
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- High current gain
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- ESD robust
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- High cut-off frequency
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- Low profile package
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- Linear gain Beta
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- Improved circuit efficiency
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- Decreased battery charge time
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- Reduce component count
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- High frequency switching
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- Smaller portable product
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- No distortion
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- AECQ101 qualified and PPAP capable
