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70T651S15BC8

70T651S15BC8

数据手册.pdf
Integrated Device Technology 艾迪悌 主动器件

256K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's

* True Dual-Port memory cells which allow simultaneous access of the same memory location * High-speed access * Commercial: 10/12/15ns max. * Industrial: 10/12ns max. * RapidWrite Mode simplifies high-speed consecutive write cycles * Dual chip enables allow for depth expansion without external logic * IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device * Busy and Interrupt Flags * On-chip port arbitration logic * Full on-chip hardware support of semaphore signaling between ports * Fully asynchronous operation from either port * Separate byte controls for multiplexed bus and bus matching compatibility * Sleep Mode Inputs on both ports * Supports JTAG features compliant to IEEE 1149.1 * Single 2.5V ±100mV power supply for core * LVTTL-compatible, selectable 3.3V ±150mV/2.5V ±100mV power supply for I/Os and control signals on each port * Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad Flatpack and 208-ball fine pitch Ball Grid Array. * Industrial temperature range –40°C to +85°C is available for selected speeds * Green parts available

70T651S15BC8中文资料参数规格
技术参数

电源电压 2.4V ~ 2.6V

封装参数

引脚数 256

封装 CABGA-256

外形尺寸

长度 17 mm

宽度 17 mm

高度 1.4 mm

封装 CABGA-256

厚度 1.40 mm

物理参数

工作温度 0℃ ~ 70℃ TA

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

70T651S15BC8引脚图与封装图
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型号 制造商 描述 购买
70T651S15BC8 Integrated Device Technology 艾迪悌 256K x 36 Async, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's 搜索库存