74AHCT1G00DBVRE4
TI
德州仪器
主动器件
单路2输入正与非门 SINGLE 2-INPUT POSITIVE-NAND GATE
Operating Range of 4.5 V to 5.5 V
Max tpd of 7.1 ns at 5 V
Low Power Consumption, 10-µA Max ICC
±8-mA Output Drive at 5 V
Inputs Are TTL-Voltage Compatible
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model A114-A
– 200-V Machine Model A115-A
– 1000-V Charged-Device Model C101
得捷:
IC GATE NAND 1CH 2-INP SOT23-5
艾睿:
NAND Gate 1-Element 2-IN CMOS 5-Pin SOT-23 T/R
Chip1Stop:
NAND Gate 1-Element 2-IN CMOS 5-Pin SOT-23 T/R
Verical:
NAND Gate 1-Element 2-IN CMOS 5-Pin SOT-23 T/R
Newark:
# TEXAS INSTRUMENTS 74AHCT1G00DBVRE4 NAND Gate, 74AHCT1G00, 2 Input, 8 mA, 4.5 V to 5.5 V, SOT-23-5
