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5962-9763301QGA

5962-9763301QGA

TI 德州仪器 主动器件

LF442QML双路低功耗JFET输入运算放大器 LF442QML Dual Low Power JFET Input Operational Amplifier

DESCRIPON

The LF442 dual low power operational amplifier provides many of the same AC characteristics as the industry standard LM1458 while greatly improving the DC characteristics of the LM1458. The amplifier has the same bandwidth, slew rate, and gain 10 kΩ load as the LM1458 and only draws one tenth the supply current of the LM1458. In addition the well matched high voltage JFET input devices of the LF442 reduce the input bias and offset currents by a factor of 10,000 over the LM1458. A combination of careful layout design and internal trimming ensures very low input offset voltage and voltage drift. The LF442 also has a very low equivalent input noise voltage for a low power amplifier.

The LF442 is pin compatible with the LM1458 allowing an immediate 10 times reduction in power drain in many applications. The LF442 should be used where low power dissipation and good electrical characteristics are the major considerations.

FEATURES

• 1/10 Supply Current of a LM1458: 400 μA Max

• Low Input Bias Current: 50 pA Typ

• Low Input Offset Voltage: 1 mV Typ

• Low Input Offset Voltage Drift: 7 μV/°C Typ

• High Gain Bandwidth: 1 MHz Typ

• High Slew Rate: 1 V/μs Typ

• Low Noise Voltage for Low Power: 35 nV/√Hz Typ

• Low Input Noise Current: 0.01 pA/√Hz Typ

• High Input Impedance: 1012Ω

5962-9763301QGA中文资料参数规格
技术参数

电路数 2

通道数 2

耗散功率 900 mW

共模抑制比 70 dB

输入补偿漂移 7.00 µV/K

转换速率 1.00 V/μs

增益频宽积 1.00 MHz

输入补偿电压 5 mV

工作温度Max 125 ℃

工作温度Min -55 ℃

耗散功率Max 900 mW

共模抑制比Min 70 dB

封装参数

安装方式 Through Hole

引脚数 8

封装 TO-99-8

外形尺寸

长度 9.14 mm

宽度 9.14 mm

高度 4.45 mm

封装 TO-99-8

其他

产品生命周期 Active

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

5962-9763301QGA引脚图与封装图
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