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4N22A
Micropac 电子元器件分类

Optocoupler DC-IN 1CH Transistor With Base DC-OUT 6Pin

DESCRIPTION

Gallium Aluminum Arsenide GaAlAs infrared LED and a highgain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The , 4N23Aand 4N24Acan be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels.

Features:

• Collector is electrically isolated from the case.

• Overall current gain...1.5 typical 4N24A

• Base lead provided for conventional transistor biasing

•Rugged package

• High gain, high voltage transistor

• +1kV electrical isolation

Applications:

• Eliminate ground loops

•Level shifting

•Line receiver

• Switching power supplies

•Motor control

4N22A中文资料参数规格
技术参数

正向电压 1.5 V

耗散功率 0.3 W

上升时间 15000 ns

隔离电压 700 v

正向电流 40 mA

击穿电压 2 V

正向电压Max 1.5 V

正向电流Max 40 mA

下降时间 15000 ns

下降时间Max 15 µs

上升时间Max 15 µs

工作温度Max 125 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Through Hole

引脚数 6

其他

产品生命周期 Active

符合标准

RoHS标准

海关信息

ECCN代码 EAR99

4N22A引脚图与封装图
暂无图片
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