M50FLW080ANB5TG
数据手册.pdf8兆位（ 13× 64K字节块+ 3 ×16× 4K字节扇区） ， 3V供应固件集线器/低引脚数闪存 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors, 3V Supply Firmware Hub / Low Pin Count Flash Memory
Summary description
The M50FLW080 is a 8 Mbit 1M x8 non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 3.0 to 3.6V supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be used to reduce the erasing and programming time.
Feature summary
■ Flash memory
– Compatible with either the LPC interface or the FWH interface Intel Spec rev1.1 used in PC BIOS applications
– 5-signal communication interface supporting Read and Write operations
– 5 additional general-purpose inputs for platform design flexibility
– Synchronized with 33 MHz PCI clock
■ 16 blocks of 64 Kbytes
– 13 blocks of 64 Kbytes each
– 3 blocks, subdivided into 16 uniform sectors of 4 Kbytes each
Two blocks at the top and one at the bottom M50FLW080A
One block at the top and two at the bottom M50FLW080B
■ Enhanced security
– Hardware Write Protect pins for block protection
– Register-based Read and Write Protection
– Individual Lock Register for each 4 KByte sector
■ Supply voltage
– VCC = 3.0 to 3.6 V for Program, Erase and Read operations
– VPP = 12 V for Fast Program and Erase
■ Two interfaces
– Auto Detection of Firmware Hub FWH or Low Pin Count LPC memory cycles for embedded operation with PC chipsets
– Address/Address Multiplexed A/A Mux interface for programming equipment compatibility.
■ Programming time: 10 µs typical
■ Program/Erase Controller
– Embedded Program and Erase algorithms
– Status Register bits
■ Program/Erase Suspend
– Read other Blocks/Sectors during Program Suspend
– Program other Blocks/Sectors during Erase Suspend
■ ELectronic signature
– Manufacturer Code: 20h
– Device Code M50FLW080A: 80h
– Device Code M50FLW080B: 81h
■ Packages
– ECOPACK® RoHS compliant
