IGW08T120FKSA1

单晶体管, IGBT, 16 A, 1.7 V, 70 W, 1.2 kV, TO-247, 3 引脚

Summary of Features:

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Lowest V cesat drop for lower conduction losses

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Low switching losses

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Easy parallel switching capability due to positive temperature coefficient in V cesat

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Very soft, fast recovery anti-parallel Emitter Controlled HE diode

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High ruggedness, temperature stable behavior

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Low EMI emissions

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Low gate charge

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Very tight parameter distribution

Benefits:

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Highest efficiency – low conduction and switching losses

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Comprehensive portfolio in 600V and 1200V for flexibility of design

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High device reliability