IPD50N10S3L16ATMA1
数据手册.pdfINFINEON IPD50N10S3L16ATMA1 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
IPD50N10S3L-16 是一款N沟道增强模式MOSFET, 具有低开关和传导功率损耗, 可实现高热能效率。
IPD50N10S3L-16, SP000386185
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- AEC-Q101合规
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- MSL1高达260°C峰值回流
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- 绿色设备
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- 100％经过雪崩测试
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- 坚固的包装, 良好的品质与可靠性
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- 优化的总栅极电荷, 仅需较小的驱动器输出级
欧时:
MOSFET N-Ch 100V 50A OptiMOS-T DPAK
立创商城:
N沟道 100V 50A
得捷:
MOSFET N-CH 100V 50A TO252-3
艾睿:
Compared to traditional transistors, IPD50N10S3L16ATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 100000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 100V 50A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD50N10S3L16ATMA1 MOSFET Transistor, N Channel, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
