IPB65R225C7ATMA1
数据手册.pdf晶体管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
表面贴装型 N 通道 11A（Tc） 63W（Tc） PG-TO263-3
得捷:
MOSFET N-CH 650V 11A D2PAK
贸泽:
MOSFET N-Ch 700V 41A D2PAK-2
e络盟:
功率场效应管, MOSFET, N沟道, 650 V, 11 A, 0.199 ohm, TO-263 D2PAK, 表面安装
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB65R225C7ATMA1 power MOSFET. Its maximum power dissipation is 63000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.
安富利:
Trans MOSFET N-CH 650MinV 11A 3-Pin D2PAK T/R
Chip1Stop:
Trans MOSFET N-CH 650V 11A 3-Pin2+Tab TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Verical:
Trans MOSFET N-CH 650V 11A 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 650V 11A D2PAK / N-Channel 650 V 11A Tc 63W Tc Surface Mount PG-TO263-3