FDZ299P

P沟道2.5 V指定的PowerTrench MOSFET BGA P-Channel 2.5 V Specified PowerTrench BGA MOSFET

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -12V 最大漏极电流IdDrain Current| -4.6A 源漏极导通电阻RdsDrain-Source On-State Resistance| 80mΩ@ VGS = -2.5V, ID = -3.6A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.6~-1.5V 耗散功率PdPower Dissipation| 1.7W Description & Applications| P-Channel 2.5 V Specified Power Trench BGA MOSFET General Description Combining ’s advanced 2.5V specified Power Trench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDSON. This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDSON. Applications · Battery management · Load switch · Battery protection Features · Ultra-thin package · Outstanding thermal transfer characteristics · Ultra-low Qg x RDSON figure-of-merit · High power and current handling capability. 描述与应用| P沟道2.5 V额定功率沟槽BGA MOSFET 概述 结合飞兆半导体先进的2.5V功率沟槽进程与国家最先进的BGA封装，的FDZ298N最大限度地减少电路板空间和RDS（ON）。这BGA MOSFET体现了包装技术的突破使设备结合优异的热传递特性，高电流处理能力，超低扁平封装，低栅极电荷和低RDS（ON）。 应用 ·电池管理 ·负荷开关 ·电池保护 特点 ·超薄封装 ·杰出的热传递的特点 ·超低QG x RDS（ON）图的优点 ·高功率和电流处理能力。