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DG612DY-T1-E3

DG612DY-T1-E3

数据手册.pdf

高速,低毛刺D / CMOS模拟开关 High-Speed, Low-Glitch D/CMOS Analog Switches

DESCRIPTION

The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications.

FEATURES

• Fast Switching - tON: 12 ns

• Low Charge Injection: ± 2 pC

• Wide Bandwidth: 500 MHz

• 5 V CMOS Logic Compatible

• Low rDSon: 18 Ω

• Low Quiescent Power : 1.2 nW

• Single Supply Operation

BENEFITS

• Improved Data Throughput

• Minimal Switching Transients

• Improved System Performance

• Easily Interfaced

• Low Insertion Loss

• Minimal Power Consumption

APPLICATIONS

• Fast Sample-and-Holds

• Synchronous Demodulators

• Pixel-Rate Video Switching

• Disk/Tape Drives

• DAC Deglitching

• Switched Capacitor Filters

• GaAs FET Drivers

• Satellite Receivers

DG612DY-T1-E3中文资料参数规格
技术参数

耗散功率 600 mW

工作温度Max 85 ℃

工作温度Min -40 ℃

耗散功率Max 600 mW

封装参数

引脚数 16

封装 SOP

外形尺寸

高度 1.55 mm

封装 SOP

物理参数

工作温度 -40℃ ~ 85℃

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

DG612DY-T1-E3引脚图与封装图
暂无图片
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