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CIG22B4R7MNE

CIG22B4R7MNE

数据手册.pdf
Samsung(三星) 被动器件

1008 4.7uH ±20%

4.7µH Shielded Multilayer Inductor 1A 250mOhm 1008 2520 Metric


得捷:
FIXED IND 4.7UH 1A 250 MOHM SMD


艾睿:
This power chip CIG22B4R7MNE surface mount inductor from Samsung Electro-Mechanics is ideal for applications where space is a major influence of circuit design. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with multi-layer technology. It has an inductance of 4.7u H. It has a tolerance of 20%. This SMD inductor has a maximum DC current of 1 A with a maximum resistance of 250mTyp Ohm. Its test frequency is 1M Hz. This product is 2.7 mm long, 1 mm tall and 2.2 mm deep.


安富利:
Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 1008 Embossed T/R


Verical:
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 0.25Ohm DCR 1008 T/R


Win Source:
4.7μH Shielded Multilayer Inductor 1A 250 mOhm 1008 2520 Metric


CIG22B4R7MNE中文资料参数规格
技术参数

额定电流 1 A

容差 ±20 %

电感 4.7 µH

产品系列 CIG

电感公差 ±20 %

测试频率 1 MHz

电阻DC) 250 mΩ

封装参数

安装方式 Surface Mount

封装 1008

外形尺寸

高度 1 mm

封装 1008

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

最小包装 3000

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

CIG22B4R7MNE引脚图与封装图
CIG22B4R7MNE引脚图

CIG22B4R7MNE引脚图

CIG22B4R7MNE封装图

CIG22B4R7MNE封装图

CIG22B4R7MNE封装焊盘图

CIG22B4R7MNE封装焊盘图

在线购买CIG22B4R7MNE
型号 制造商 描述 购买
CIG22B4R7MNE Samsung 三星 1008 4.7uH ±20% 搜索库存
替代型号CIG22B4R7MNE
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: CIG22B4R7MNE

品牌: Samsung 三星

封装: 1008 4.7uH

当前型号

1008 4.7uH ±20%

当前型号

型号: VLF302510MT-4R7M

品牌: 东电化

封装: 4.7uH

功能相似

TDK  VLF302510MT-4R7M  表面贴装功率电感器, VLF-M系列, 4.7 µH, ± 20%, 屏蔽, 0.168 ohm, 1.08 A

CIG22B4R7MNE和VLF302510MT-4R7M的区别

型号: VLS252012HBX-4R7M-1

品牌: 东电化

封装: 4.7uH

功能相似

TDK  VLS252012HBX-4R7M-1  表面贴装功率电感器, VLS-HBX-1系列, 4.7 µH, ± 20%, 屏蔽, 0.24 ohm, 1.65 A

CIG22B4R7MNE和VLS252012HBX-4R7M-1的区别