CIG22L6R8MNE
数据手册.pdfSamsung(三星)
被动器件
CIG 系列 2520 6.8 uH 20 % 0.8 A SMD 屏蔽 功率电感
6.8µH Shielded Multilayer Inductor 800mA 203mOhm 1008 2520 Metric
得捷:
FIXED IND 6.8UH 800MA 203MOHM SM
艾睿:
Inductor Power Chip Shielded Multi-Layer 6.8uH 20% 1MHz Ferrite 800mA 203mOhm DCR 1008 T/R
安富利:
Ind Power Chip Shielded Multi-Layer 6.8uH 20% 1MHz Ferrite 800mA 1008 Embossed T/R
富昌:
CIG 系列 2520 6.8 uH 20 % 0.8 A SMD 屏蔽 功率电感
Chip1Stop:
Inductor Power Chip Shielded Multi-Layer 6.8uH 20% 1MHz Ferrite 800mA 203mOhm DCR 1008 Embossed T/R
Verical:
Inductor Power Chip Shielded Multi-Layer 6.8uH 20% 1MHz Ferrite 800mA 203mOhm DCR 1008 T/R
Win Source:
6.8μH Shielded Multilayer Inductor 800mA 203 mOhm 1008 2520 Metric