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CIG22B2R2MNE

CIG22B2R2MNE

数据手册.pdf
Samsung(三星) 被动器件

1008 2.2uH ±20%

2.2µH Shielded Multilayer Inductor 1.1A 183mOhm 1008 2520 Metric


得捷:
FIXED IND 2.2UH 1.1A 183MOHM SMD


艾睿:
This power chip CIG22B2R2MNE surface mount inductor from Samsung Electro-Mechanics is available in all standard chip sizes in multilayer thick film and thin film deposition and wire wound styles. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with multi-layer technology. Its test frequency is 1M Hz. It has an inductance of 2.2u H. It has a tolerance of 20%. This product is 2.7 mm long, 1 mm tall and 2.2 mm deep. This SMD inductor has a maximum DC current of 1.1 A with a maximum resistance of 180mTyp Ohm.


富昌:
Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.1A 1008 Embossed T/


Verical:
Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.1A 0.18Ohm DCR 1008 T/R


儒卓力:
**CIG22B 2,2uH 1,1A 20% MLT **


CIG22B2R2MNE中文资料参数规格
技术参数

额定电流 1.1 A

容差 ±20 %

电感 2.2 µH

产品系列 CIG

电感公差 ±20 %

测试频率 1 MHz

电阻DC) 183 mΩ

封装参数

安装方式 Surface Mount

封装 1008

外形尺寸

长度 2.5 mm

宽度 2 mm

高度 1 mm

封装 1008

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

最小包装 3000

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

CIG22B2R2MNE引脚图与封装图
CIG22B2R2MNE引脚图

CIG22B2R2MNE引脚图

CIG22B2R2MNE封装图

CIG22B2R2MNE封装图

CIG22B2R2MNE封装焊盘图

CIG22B2R2MNE封装焊盘图

在线购买CIG22B2R2MNE
型号 制造商 描述 购买
CIG22B2R2MNE Samsung 三星 1008 2.2uH ±20% 搜索库存