CIG21W3R3MNE
数据手册.pdfSamsung(三星)
被动器件
CIG 系列 2012 3.3 uH 20 % 0.73 A SMD 屏蔽 功率电感
3.3µH Shielded Multilayer Inductor 730mA 250mOhm 0805 2012 Metric
得捷:
FIXED IND 3.3UH 730MA 250MOHM SM
艾睿:
Inductor Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 730mA 250mOhm DCR 0805 T/R
安富利:
POWER INDUCTOR, NORMAL, 0805INCH, 20%, 7" EMBOSSED TYPE
富昌:
CIG 系列 2012 3.3 uH 20 % 0.73 A SMD 屏蔽 功率电感
Win Source:
FIXED IND 3.3UH 730MA 250MOHM SM / 3.3 µH Shielded Multilayer Inductor 730 mA 250mOhm 0805 2012 Metric