BSO080P03SHXUMA1

INFINEON  BSO080P03SHXUMA1  晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 12.6A 8DSO

立创商城:
P沟道 30V 12.6A

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSO080P03SHXUMA1, 14.9 A, Vds=30 V, 8引脚 DSO封装

贸泽:
MOSFET SMALL SIGNAL+P-CH

e络盟:
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSO080P03SHXUMA1 power MOSFET can provide a solution. Its maximum power dissipation is 1790 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 30V 12.6A 8-Pin DSO T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8

Verical:
Trans MOSFET P-CH 30V 12.6A Automotive 8-Pin DSO Dry

Newark:
# INFINEON  BSO080P03SHXUMA1  MOSFET Transistor, P Channel, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V

Win Source:
MOSFET P-CH 30V 12.6A 8DSO / P-Channel 30 V 12.6A Ta 1.79W Ta Surface Mount PG-DSO-8