BSZ160N10NS3GATMA1

INFINEON  BSZ160N10NS3GATMA1  晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 100V 8A/40A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ160N10NS3GATMA1, 40 A, Vds=100 V, 8引脚 TSDSON封装

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 40 A, 0.014 ohm, PG-TSDSON, 表面安装

艾睿:
Create an effective common drain amplifier using this BSZ160N10NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 63000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 100V 8A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ160N10NS3GATMA1  MOSFET Transistor, N Channel, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V