BULB39D-1
数据手册.pdf高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Bipolar BJT Transistor NPN 450V 4A 70W Surface Mount D2PAK
得捷:
TRANS NPN 450V 4A D2PAK
艾睿:
Use this versatile NPN BULB39D-1 GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 70000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Win Source:
TRANS NPN 450V 4A D2PAK