BSC0901NSATMA1
数据手册.pdfINFINEON BSC0901NSATMA1 晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V
表面贴装型 N 通道 30 V 28A（Ta），100A（Tc） 2.5W（Ta），69W（Tc） PG-TDSON-8-5
欧时:
MOSFET OptiMOS3 30V 100A 1.9mOhm TDSON8
得捷:
MOSFET N-CH 30V 28A/100A TDSON
贸泽:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
艾睿:
Compared to traditional transistors, BSC0901NSATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 69000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R
Chip1Stop:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC0901NSATMA1 MOSFET Transistor, N Channel, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V
Win Source:
MOSFET N-CH 30V 28A/100A TDSON / N-Channel 30 V 28A Ta, 100A Tc 2.5W Ta, 69W Tc Surface Mount PG-TDSON-8-5