2SJ387L-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

• Low drive current

• 2.5 V Gate drive device can be driven from 3 V Source

• Suitable for Switching regulator, DC-DC converter

立创商城:
2SJ387L-E

罗切斯特:
Trans MOSFET P-CH 20V 10A 3-Pin3+Tab DPAKL-2 Box