2SD1047
数据手册.pdf单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 12 A, 50 hFE
Bipolar BJT Transistor NPN 140V 12A 20MHz 100W Through Hole TO-3P
欧时:
STMicroelectronics, 2SD1047
得捷:
TRANS NPN 140V 12A TO3P
立创商城:
NPN 140V 12A
贸泽:
Bipolar Transistors - BJT IGBT & Power Bipolar
艾睿:
Use this versatile NPN 2SD1047 GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
安富利:
Trans GP BJT NPN 140V 12A 3-Pin3+Tab TO-3P Tube
富昌:
2SD1047 Series 140 V 12 A High Power NPN Epitaxial Planar Bipolar Transistor
Chip1Stop:
Trans GP BJT NPN 140V 12A 3-Pin3+Tab TO-3P Tube
TME:
Transistor: NPN; bipolar; 140V; 12A; 100W; TO3P
Verical:
Trans GP BJT NPN 140V 12A 100000mW 3-Pin3+Tab TO-3P Tube
Newark:
# STMICROELECTRONICS 2SD1047 TRANSISTOR, BIPOL, NPN, 140V, TO-3P-3 New
DeviceMart:
TRANS NPN BIT-LA 140V TO-3P
Win Source:
TRANS NPN 140V 12A TO-3P