2N2369
数据手册.pdf
Multicomp
分立器件
MULTICOMP 2N2369 单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE
The from is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
- .
- Collector emitter voltage Vce of 15V
- .
- Continuous collector current Ic of 200mA
- .
- Power dissipation of 360mW
- .
- Operating junction temperature range from -65°C to 200°C
- .
- Collector emitter saturation voltage is less than 250mV at Ic=10mA
- .
- DC current gain is greater than 20 at Ic=100mA