2SA1727TLP
数据手册.pdf2SA1727TLP PNP三极管 -400V -500mA/-0.5A 12MHz 135~270 -1000mV/-1V TO-252/DPAK marking/标记 A1727 高击穿电压
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -400V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| -400V 集电极连续输出电流ICCollector CurrentIC| −500mA/-0.5A 截止频率fTTranstion FrequencyfT| 12MHz 直流电流增益hFEDC Current GainhFE| 135~270 管压降VCE(sat)Collector-Emitter SaturationVoltage| -1000mV/-1V 耗散功率PcPoWer Dissipation| 1W Description & Applications| High-voltage Switching Transistor Features 1 High breakdown voltage, BVCEO= 400V. 2 Low saturation voltage, typically VCE sat = 0.3V at IC / IB = 100mA / 10mA. 3 High switching speed, typically tf : 1 s at IC = 100mA. 4 Wide SOA safe operating area. 描述与应用| 高压开关 特点 1)高击穿电压BVCEO= 400V。 2)低饱和电压,通常VCE(sat)的IC / IB= 0.3V=100mA/10毫安的。 3)高开关速度,通常是TF:IC=100MA1秒。 4)宽安全工作区(SOA)