2SB1463GRL

PNP硅外延平面晶体管对于高击穿电压低噪声放大补充型2SD2240特点高集电极发射极电压VCEO。低噪声电压NVSS-迷你型封装

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -150V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −150V 集电极连续输出电流ICCollector CurrentIC| −100mA/-0.1A 截止频率fTTranstion FrequencyfT| 200MHz 直流电流增益hFEDC Current GainhFE| 130~220 管压降VCE（sat）Collector-Emitter SaturationVoltage| -1000mV/-1V 耗散功率PcPoWer Dissipation| 125mW/0.125W Description & Applications| PNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD2240 Features High collector to emitter voltage VCEO. Low noise voltage NV SS-Mini type package 描述与应用| PNP硅外延平面 对于高击穿电压低噪声放大 补充型2SD2240 特点 高集电极发射极电压VCEO。 低噪声电压NV SS-迷你型封装