2STF2220
数据手册.pdf高增益低电压PNP功率晶体管 High gain Low Voltage PNP power transistor
Bipolar BJT Transistor PNP 20V 1.5A 1.4W Surface Mount SOT-89-3
得捷:
TRANS PNP 20V 1.5A SOT89-3
贸泽:
双极晶体管 - 双极结型晶体管BJT Hi gain Lo Vltg PNP Pwr transistor
艾睿:
This specially engineered PNP 2STF2220 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
Chip1Stop:
Trans GP BJT PNP 20V 1.5A 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS PNP 20V 1.5A SOT-89
