2N2945A
数据手册.pdfMicrosemi(美高森美)
分立器件
PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR
Use this versatile PNP GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 25 V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 25 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.