2N6111

STMICROELECTRONICS  2N6111  单晶体管 双极, 通用, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE

- 双极 BJT - 单 PNP 30 V 7 A 4MHz 40 W 通孔 TO-220AB

得捷:
TRANS PNP 30V 7A TO220

艾睿:
This specially engineered PNP 2N6111 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

富昌:
2N6111 系列 40 V 7 A 通孔 硅PNP开关晶体管 - TO-220-3

Verical:
Trans GP BJT PNP 30V 7A 3-Pin3+Tab TO-220 Tube

Newark:
Bipolar BJT Single Transistor, General Purpose, PNP, -30 V, 4 MHz, 40 W, 7 A, 30 hFE