2N5192

STMICROELECTRONICS  2N5192  单晶体管 双极, NPN, 80 V, 40 W, 4 A, 80 hFE

- 双极 BJT - 单

得捷:
TRANS NPN 80V 4A SOT32-3

贸泽:
Bipolar Transistors - BJT NPN Power Switching

e络盟:
STMICROELECTRONICS  2N5192  单晶体管 双极, NPN, 80 V, 40 W, 4 A, 80 hFE

艾睿:
Jump-start your electronic circuit design with this versatile NPN 2N5192 GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 80V 4A 3-Pin3+Tab SOT-32 Tube

Chip1Stop:
Trans GP BJT NPN 80V 4A 3-Pin3+Tab SOT-32 Tube

Verical:
Trans GP BJT NPN 80V 4A 3-Pin3+Tab SOT-32 Tube