2STBN15D100T4
数据手册.pdf低电压NPN功率达林顿晶体管 Low voltage NPN power Darlington transistor
- 双极 BJT - 单 NPN - 达林顿 100 V 12 A - 70 W 表面贴装型 D²PAK
得捷:
TRANS NPN DARL 100V 12A D2PAK
贸泽:
双极晶体管 - 双极结型晶体管BJT Low Voltage NPN 750 hFE 100V Vceo
艾睿:
Amplify your current using STMicroelectronics&s; NPN 2STBN15D100T4 Darlington transistor in order to yield a higher current gain. This Darlington transistor array&s;s maximum emitter base voltage is 5 V. This product&s;s maximum continuous DC collector current is 12 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 1.5@1mA@0.5A|1.3@4mA@4A V. Its maximum power dissipation is 70000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Chip1Stop:
Trans Darlington NPN 100V 12A 3-Pin2+Tab D2PAK T/R