2N6075BG
数据手册.pdf
ON Semiconductor
安森美
分立器件
ON SEMICONDUCTOR 2N6075BG 三端双向可控硅, 600 V, 5 mA, 10 W, 2.5 V, TO-225, 30 A
The is a sensitive gate TRIAC designed primarily for full‐wave AC control applications or wherever full‐wave silicon gate controlled solid‐state device is needed. This silicon bidirectional thyristor switches from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. The sensitive gate triggering uniquely compatible for direct coupling to TTL, HTL, CMOS and operational amplifier integrated circuit logic functions.
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- 4 Mode gate triggering
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- Blocking voltage to 600V
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- All diffused and glass passivated junctions for greater parameter uniformity and stability
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- Small, rugged, thermopad construction for low thermal resistance, high heat dissipation & durability
