2STR2160
数据手册.pdf低压快速开关PNP功率晶体管 Low voltage fast-switching PNP power transistor
- 双极 BJT - 单 PNP - 表面贴装型 SOT-23-3
得捷:
TRANS PNP 60V 1A SOT23-3
欧时:
STMicroelectronics, 2STR2160
立创商城:
PNP 60V 1A
e络盟:
单晶体管 双极, PNP, -60 V, 500 mW, -1 A, 45 hFE
艾睿:
This specially engineered PNP 2STR2160 GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 60V 1A 3-Pin SOT-23 T/R
Win Source:
TRANS PNP 60V 1A SOT23-3