2STR1160

STMICROELECTRONICS  2STR1160  单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE

通用 NPN ，STMicroelectronics

得捷:
TRANS NPN 60V 1A SOT23-3

欧时:
STMicroelectronics 2STR1160 , NPN 双极晶体管, 1 A, Vce=60 V, HFE:85, 3引脚 SOT-23封装

贸泽:
双极晶体管 - 双极结型晶体管BJT Low-Volt Fast Switch NPN Pwr Tran

e络盟:
单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE

艾睿:
Compared to other transistors, the NPN 2STR1160 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT NPN 60V 1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 60V 1A 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 60V 1A 500mW 3-Pin SOT-23 T/R

Newark:
# STMICROELECTRONICS  2STR1160  Bipolar BJT Single Transistor, NPN, 60 V, 500 mW, 1 A, 250 hFE

Win Source:
TRANS NPN 60V 1A SOT-23