2SA1179N6-TB-E
数据手册.pdfPNP 晶体管,ON Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。### 双极性晶体管,On SemiconductorON Semiconductor 的各种双极晶体管,包括以下类别:小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
小信号 PNP ,
### 标准
带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
得捷:
TRANS PNP 50V 0.15A 3CP
欧时:
ON Semiconductor 2SA1179N6-TB-E , PNP 晶体管, 150 mA, Vce=50 V, HFE:200, 180 MHz, 3引脚 CPA封装
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this PNP 2SA1179N6-TB-E GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
Allied Electronics:
ON Semi 2SA1179N6-TB-E PNP Bipolar Transistor, 0.15 A, 50 V, 3-Pin CPA
Chip1Stop:
Trans GP BJT PNP 50V 0.15A 3-Pin SOT-23 T/R
Win Source:
TRANS PNP 50V 0.15A CP