
频率 1 kHz
额定电压DC 30.0 V
额定电流 13 mA
击穿电压 -30.0 V
极性 N-Channel
耗散功率 350 mW
栅源击穿电压 30.0 V
击穿电压 30 V
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 350 mW
额定电压 30 V
安装方式 Through Hole
引脚数 3
封装 TO-226-3
高度 5.33 mm
封装 TO-226-3
产品生命周期 Unknown
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
2N5951 | Fairchild 飞兆/仙童 | FAIRCHILD SEMICONDUCTOR 2N5951 晶体管, JFET, JFET, 30 V, 7 mA, 13 mA, 5 V, TO-92, JFET | 搜索库存 |
图片 | 型号/品牌/封装 | 代替类型 | 描述 | 替代型号对比 |
---|---|---|---|---|
型号: 2N5951 品牌: Fairchild 飞兆/仙童 封装: TO-92 N-Channel 30V 13mA 350mW | 当前型号 | FAIRCHILD SEMICONDUCTOR 2N5951 晶体管, JFET, JFET, 30 V, 7 mA, 13 mA, 5 V, TO-92, JFET | 当前型号 | |
型号: 2N5951LEADFREE 品牌: Central Semiconductor 封装: | 功能相似 | RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3Pin | 2N5951和2N5951LEADFREE的区别 | |
型号: 2N5951TRE 品牌: Central Semiconductor 封装: | 功能相似 | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, | 2N5951和2N5951TRE的区别 | |
型号: 2N5951TRELEADFREE 品牌: Central Semiconductor 封装: | 功能相似 | RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | 2N5951和2N5951TRELEADFREE的区别 |