2N7002
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR 2N7002 晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
- .
- High density cell design for extremely low RDS ON
- .
- High saturation current capability
- .
- Voltage controlled small signal switch
- .
- Rugged and reliable
