2N7000BU
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR 2N7000BU 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
The is an advanced small-signal N-channel enhancement-mode MOSFET produced using "s proprietary high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
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- Fast switching times
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- Improved inductive ruggedness
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- Lower input capacitance
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- Extended safe operating area
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- Improved high-temperature reliability