2N7002W
数据手册.pdfFAIRCHILD SEMICONDUCTOR 2N7002W 晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 115mA/0.115A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 1.6Ω/Ohm @50mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-2V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| N-Channel Enhancement Mode Field Effect Transistor Features N-Channel Enhancement Mode Field Effect Transistor Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant 描述与应用| N沟道增强型场效应 特性 N沟道增强型场效应晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 超小型表面贴装封装 无铅/ RoHS标准