2SK209-GRTE85L,F
数据手册.pdf
Toshiba
东芝
分立器件
N沟道,10V,0.014A,150mW
Audio Frequency Low Noise Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS typ. at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB typ.
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
• High input impedance: IGSS = −1 nA max at VGS = −30 V
• Small package
欧时:
Trans JFET N-CH Si 3-Pin S-Mini T/R
得捷:
JFET N-CH 50V 14MA SC59
立创商城:
2SK209-GRTE85L,F
艾睿:
Trans JFET N-CH Si 3-Pin S-Mini T/R
安富利:
Trans JFET N-CH 6.5mA 3-Pin S-Mini T/R
Chip1Stop:
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
TME:
Transistor: N-JFET; unipolar; 14mA; 150mW; SC59; Igt:10mA
Verical:
Trans JFET N-CH 6.5mA Si 3-Pin S-Mini T/R
Win Source:
JFET N-CH SOT23