1N755A-1
数据手册.pdfSILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
• 1N746A-1 THRU 1N759-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127
• 1N4370A-1 THRU 1N4372A-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
贸泽:
稳压二极管 Voltage Regulator
艾睿:
Now you can operate a diode in its reverse breakdown region by using a voltage regulator 1N755A-1 zener diode from Microsemi. Its test current is 20 mA. Its maximum power dissipation is 500 mW. This device has a maximum regulator current of 50 mA. Its maximum leakage current is 2 μA. This zener diode has an operating temperature range of -65 °C to 175 °C. It is made in a single configuration. This zener device has a nominal voltage of 7.5 V and a voltage tolerance of 5%.