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STW19NM60N

STW19NM60N

数据手册.pdf

N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics

N 通道 MDmesh™,600V/650V,STMicroelectronics

### MOSFET ,STMicroelectronics


得捷:
MOSFET N-CH 600V 13A TO247


立创商城:
STW19NM60N


欧时:
STMicroelectronics MDmesh 系列 Si N沟道 MOSFET STW19NM60N, 13 A, Vds=650 V, 3引脚 TO-247封装


贸泽:
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmeshTM


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STW19NM60N power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh technology.


安富利:
Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube


Chip1Stop:
Trans MOSFET N-CH 600V 13A Automotive 3-Pin3+Tab TO-247 Tube


DeviceMart:
MOSFET N-CH 600V 13A TO-247


Win Source:
MOSFET N-CH 600V 13A TO-247


STW19NM60N中文资料参数规格
技术参数

极性 N-CH

耗散功率 110 W

漏源极电压Vds 600 V

连续漏极电流Ids 13A

上升时间 15 ns

输入电容Ciss 1000pF @50VVds

额定功率Max 110 W

下降时间 25 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 110W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

长度 15.75 mm

宽度 5.15 mm

高度 20.15 mm

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

STW19NM60N引脚图与封装图
暂无图片
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