SI2323DS-T1-E3
数据手册.pdfVISHAY SI2323DS-T1-E3 晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
The is a P-channel TrenchFET® Power MOSFET with power dissipation at 1.25W.
- .
- ±8V Gate-source voltage
- .
- Halogen-free
欧时:
### P 通道 MOSFET,8V 至 20V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
e络盟:
VISHAY SI2323DS-T1-E3 场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
艾睿:
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
富昌:
单 P 沟道 20 V 0.039 Ohms 表面贴装 功率 Mosfet - TO-236
TME:
Transistor: P-MOSFET; unipolar; -20V; -4.7A; SOT23
Verical:
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2323DS-T1-E3 MOSFET Transistor, P Channel, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
力源芯城:
-20V,-4.7A,G163P沟道功率MOSFET