MMRF1314GSR5
数据手册.pdfNXP(恩智浦)
分立器件
RF Power Transistor,1200 to 1400MHz, 1000W, Typ Gain in dB is 15.5 @ 1200MHz, 52V, LDMOS, SOT1806
RF Mosfet LDMOS Dual 50V 100mA 1.4GHz 17.7dB 1000W NI-1230-4S GULL
得捷:
TRANS 960-1215MHZ 1000W PEAK 50V
艾睿:
RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
RfMW:
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 15.5 @ 1200 MHz, 52 V, LDMOS, SOT1806