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MJD361T4-A

MJD361T4-A

数据手册.pdf

DPAK PNP 60V 3A

If your circuit"s specifications require a device that can handle high levels of voltage, STMicroelectronics" PNP general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

MJD361T4-A中文资料参数规格
技术参数

极性 PNP

耗散功率 15 W

击穿电压集电极-发射极 60 V

集电极最大允许电流 3A

最小电流放大倍数hFE 60 @1A, 4V

额定功率Max 15 W

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 15000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

MJD361T4-A引脚图与封装图
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