ZXMN3A06DN8TA

ZXMN3A06DN8TA 编带

MOSFET - 阵列 2 N-通道（双） 30V 4.9A 1.8W 表面贴装型 8-SO

得捷:
MOSFET 2N-CH 30V 4.9A 8-SOIC

立创商城:
2个N沟道 30V 4.9A

贸泽:
MOSFET Dl 30V N-Chnl UMOS

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the ZXMN3A06DN8TA power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Allied Electronics:
MOSFET Dual N-Channel 30V 6.2A SOIC8

安富利:
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R

Chip1Stop:
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R

Verical:
Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R

Win Source:
MOSFET 2N-CH 30V 4.9A 8-SOIC