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ZXTN26020DMFTA

ZXTN26020DMFTA

数据手册.pdf
Diodes(美台) 分立器件

Trans GP BJT NPN 20V 1.5A Automotive 3Pin DFN EP T/R

- 双极 BJT - 单 NPN 20 V 1.5 A 260MHz 1 W 表面贴装型 3-DFN1411(1.4x1.1)


立创商城:
ZXTN26020DMFTA


得捷:
TRANS NPN 20V 1.5A 3DFN


贸泽:
Bipolar Transistors - BJT NPN 20V Bipolar 1.5A Ic 380mw


艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN ZXTN26020DMFTA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans GP BJT NPN 20V 1.5A 3-Pin DFN EP T/R


Chip1Stop:
Trans GP BJT NPN 20V 1.5A 3-Pin DFN EP T/R


Verical:
Trans GP BJT NPN 20V 1.5A Automotive 3-Pin DFN EP T/R


Win Source:
HIGH GAIN, LOW VCESAT NPN BIPOLAR TRANSISTOR


ZXTN26020DMFTA中文资料参数规格
技术参数

频率 260 MHz

额定功率 1 W

极性 NPN

耗散功率 1 W

增益频宽积 260 MHz

击穿电压集电极-发射极 20 V

集电极最大允许电流 1.5A

最小电流放大倍数hFE 290 @500mA, 2V

最大电流放大倍数hFE 1000 @100mA, 2V

额定功率Max 1 W

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 1000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 DFN-3

外形尺寸

封装 DFN-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

ZXTN26020DMFTA引脚图与封装图
暂无图片
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ZXTN26020DMFTA Diodes 美台 Trans GP BJT NPN 20V 1.5A Automotive 3Pin DFN EP T/R 搜索库存